technical data sheet 6 lake street, lawrence, ma 01841 1-800-446-1158 / (978) 620-2600 / fax: (978) 689-0803 website: http: //www.microsemi.com radiation hardened n-channel mosfet reference mil-prf-19500/601 t4-lds-0120 rev. 2 (101017) page 1 of 5 devices levels 2N7262 2N7262u jansr (100k rad(si)) jansf (300k rad(si)) absolute maximum ratings (t c = +25c unless otherwise noted) parameters / test conditions symbol value unit drain C source voltage v ds 200 vdc gate C source voltage v gs 20 vdc continuous drain current t c = +25c i d1 5.5 adc continuous drain current t c = +100c i d2 3.5 adc max. power dissipation p tl 25 (1) w drain to source on state resistance r ds(on) 0.35 (2) operating & storage temperature t op , t stg -55 to +150 c note: (1) derated linearly by 0.2 w/c for t c > +25c (2) v gs = 12vdc, i d = 3.5a pre-irradiation electri cal characteristics (t a = +25c, unless otherwise noted) parameters / test conditions symbol min. max. unit drain-source breakdown voltage v gs = 0v, i d = 1madc v (br)dss 200 vdc gate-source voltage (threshold) v ds v gs , i d = 1.0ma v ds v gs , i d = 1.0ma, t j = +125c v ds v gs , i d = 1.0ma, t j = -55c v gs(th)1 v gs(th)2 v gs(th)3 2.0 1.0 4.0 5.0 vdc gate current v gs = 20v, v ds = 0v v gs = 20v, v ds = 0v, t j = +125c i gss1 i gss2 100 200 nadc drain current v gs = 0v, v ds = 160v v gs = 0v, v ds = 200v, t j = +125c v gs = 0v, v ds = 160v, t j = +125c i dss1 i dss2 i dss3 25 1.0 0.25 adc madc madc static drain-source on-state resistance v gs = 12v, i d = 3.5a pulsed v gs = 12v, i d = 5.5a pulsed t j = +125c v gs = 12v, i d = 3.5a pulsed r ds(on)1 r ds(on)2 r ds(on)3 0..350 0.364 0.60 diode forward voltage v gs = 0v, i d = 5.5a pulsed v sd 1.4 vdc to-205af (modified to-39) jansr2N7262, jansf2N7262 see figure 1 18 pin leadless chip carrier jansr2N7262u, jansf2N7262u see figure 2 downloaded from: http:///
technical data sheet 6 lake street, lawrence, ma 01841 1-800-446-1158 / (978) 620-2600 / fax: (978) 689-0803 website: http: //www.microsemi.com radiation hardened n-channel mosfet reference mil-prf-19500/601 t4-lds-0120 rev. 2 (101017) page 2 of 5 dynamic characteristics parameters / test conditions symbol min. max. unit gate charge: on-state gate charge gate to source charge gate to drain charge v gs = 12v, i d = 5.5a v ds = 100v q g(on) q gs q gd 50 10 20 nc switching characteristics parameters / test conditions symbol min. max. unit switching time tests: turn-on delay time rinse time turn-off delay time fall time i d = 5.5a, v gs = 12vdc, gate drive impedance = 2.35 , v dd = 100vdc t d(on) t r t d(off) t f 25 32 40 40 ns diode reverse recovery time di/dt 100a/s, v dd 30v, i f = 5.5a t rr 400 ns post-irradiation electrical characteristics (3) (t a = +25c, unless otherwise noted) parameters / test conditions symbol min. max. unit drain-source breakdown voltage v gs = 0v, i d = 1madc v (br)dss 200 vdc gate-source voltage (threshold) v ds v gs , i d = 1.0ma msr v ds v gs , i d = 1.0ma msf v gs(th)1 v gs(th)1 2.0 1.25 4.0 4.5 vdc gate current v gs = 20v, v ds = 0v i gss1 100 nadc drain current v gs = 0v, v ds = 160v msr v gs = 0v, v ds = 160v msf i dss1 25 50 adc static drain-source on-state voltage v gs = 12v, i d = 3.5a pulsed msr v gs = 12v, i d = 3.5a pulsed msf v ds(on) 1.225 1.68 vdc diode forward voltage v gs = 0v, i d = 5.5a pulsed v sd 1.4 vdc note: (3) post-irradiation electrical characteristics apply to devices subjected to steady st ate total dose irradiation testing in accordance with mil- std-750 method 1019. separa te samples are tested for vg s bias (12v), and vds bias (160v) conditions. downloaded from: http:///
technical data sheet 6 lake street, lawrence, ma 01841 1-800-446-1158 / (978) 620-2600 / fax: (978) 689-0803 website: http: //www.microsemi.com radiation hardened n-channel mosfet reference mil-prf-19500/601 t4-lds-0120 rev. 2 (101017) page 3 of 5 single event effect (see) characteristics: heavy ion testing of the 2N7262 device has been charact erized at the texas a&m cyclotron. the following soa curve has been established us ing the elements, let, range, and to tal energy conditions as shown: 2N7262 0 20 40 60 80 100 120 140 160 180 200 220 -25 -20 -15 -10 -5 0 gate bias, v drain bias, v tamu ar let=8.3 range =192um total energy=531mev tamu kr let=27.8 range =134um total energy=1032mev tamu ag let=42.2 range =119um total energy=1289mev tamu au let=85.4 range =118um total energy=2247mev it should be noted that total energy le vels are considered to be a factor in see characterization. comparisons to other datasets should not be based on let alone. please consult factory for more information. downloaded from: http:///
technical data sheet 6 lake street, lawrence, ma 01841 1-800-446-1158 / (978) 620-2600 / fax: (978) 689-0803 website: http: //www.microsemi.com radiation hardened n-channel mosfet reference mil-prf-19500/601 t4-lds-0120 rev. 2 (101017) page 4 of 5 figure 1: case outline and pin conf iguration for jansr2N7262 & jansf2N7262 downloaded from: http:///
technical data sheet 6 lake street, lawrence, ma 01841 1-800-446-1158 / (978) 620-2600 / fax: (978) 689-0803 website: http: //www.microsemi.com radiation hardened n-channel mosfet reference mil-prf-19500/601 t4-lds-0120 rev. 2 (101017) page 5 of 5 figure 2: case outline and pin conf iguration for jansr2N7262u & jansf2N7262u downloaded from: http:///
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